5 results for "Burhanuddin Y. Majlis"

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In 0.53 Ga 0.47 As MOSFET

Mohd F. Mohd Razip Wee; Arash Dehzangi; Sylvain Bollaert et al.

PLoS ONE, Vol. 8 No. 12 · 2013 · English · PLOS Scopus

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

Also available at: DOAJ

Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography

Arash Dehzangi; Farhad Larki; Sabar D. Hutagalung et al.

PLoS ONE, Vol. 8 No. 6 · 2013 · English · PLOS Scopus

In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (1015 cm−3) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon…

Also available at: DOAJ

Impact of KOH Etching on Nanostructure Fabricated by Local Anodic Oxidation Method

Arash Dehzangi; Farhad Larki; Burhanuddin Y. Majlis et al.

International Journal of Electrochemical Science, Vol. 8 No. 6 · 2013 · English · DOAJ Scopus

In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator. An electrochemical process, as the local anodic oxidation followed by two wet chemical etching steps, KOH etching…