2 hasil untuk "Burhanuddin Y. Majlis"
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Artikel Jurnal Teks lengkap
Gate Length Variation Effect on Performance of Gate-First Self-Aligned In 0.53 Ga 0.47 As MOSFET
A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…
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Artikel Jurnal Teks lengkap
Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography
In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (1015 cm−3) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon…