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IEEE Transactions on Electron Devices

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ISSN 0018-9383 · Institute of Electrical and Electronics Engineers · 1 articles in the index

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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Matteo Buffolo; Davide Favero; A. Marcuzzi et al.

IEEE Transactions on Electron Devices · 2024 · English · OpenAlex Scopus

We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Material properties and structural differences among GaN and SiC devices are first discussed. Based on the analysis…

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