1,728 results
Showing 1–20 · 0.16 seconds · RSS
IEEE Journal of the Electron Devices Society
Scopus
ISSN 2168-6734 · IEEE · 1,728 articles in the index
-
Journal Article
Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer. Solving the compatibility issue in device fabrication, both…
-
Journal Article
Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives
The relentless advancement of the semiconductor industry continues to be fueled by the pursuit of enhanced transistor performance. As CMOS technology undergoes aggressive scaling to enable higher integration densities in modern integrated circuits (ICs), there arises a pressing demand for novel…
-
Journal Article
Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
High-performance GaN-based ultraviolet (UV) photodetectors (PDs) are essential for applications in harsh-environment sensing, space-based UV monitoring, and high-speed optical communications. However, conventional GaN-based p-i-n homojunction UV photodetectors face limitations in responsivity due…
-
Journal Article
Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
The gate-HBM-ESD characteristics of GaN HEMTs integrated with matching networks in package level have been investigated under the positive and negative stresses. For comparison, the GaN HEMTs without matching networks are simultaneously examined to elucidate the influences of the matching networks…
-
Journal Article
Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
In this paper, the stress degradation of P-channel Fin Field-Effect Transistor (FinFET) under AC mixed NBTI and HCD stress is studied and compared with the effects of individual NBTI and HCD. In the scope of this study, degradation caused by interface traps becomes more and more dominant with the…
-
Journal Article
Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W
Gallium nitride (GaN) is a high-performance wide bandgap semiconductor material with unique physical and chemical properties such as higher breakdown electric field, higher electron density, superior electron mobility and saturation velocity. These properties endow GaN with unparalleled advantages…
-
Journal Article
Landau–Khalatnikov-Based Modeling and Design Methodology for 1T-1FeFET Ferroelectric Neuron Oscillators
Bio-inspired neural network architecture, as a promising solution to the von Neumann bottleneck, has attracted widespread attention with ferroelectric (FE) devices emerging as leading candidates for mimicking neuronal behavior. In this study, we explore the oscillatory dynamics of a 1T-1FeFET-based…
-
Journal Article
Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Method
We develop a multi-pulse test for dynamic interface trap characterization in lateral double-diffused MOSFET (LDMOS) devices. By extracting the gate-to-drain charge $(Q_{\mathrm { GD}})$ during Miller plateau, the proposed method indicates the quantitative evaluation of the interface trap charge…
-
Journal Article
Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coating
This paper proposes a novel 4H-SiC Photoconductive Semiconductor Switches (PCSS) with anti-reflection function for incident lasers, which depends on an AlN composite anti-reflection coating. The key innovation lies in the graded-index design of the anti-reflection coating, which is fabricated as a…
-
Journal Article
Memory Window Enhancement With Germanium-Incorporated Charge Trap Layer in Flash Memory Device
We demonstrate a charge-trap flash (CTF) device with a germanium-incorporated silicon nitride (Ge:SiN) charge-trap layer (CTL). Compared to a conventional SiN CTL, the 6 nm-thick Ge:SiN CTL exhibits increased trap density and deeper trap levels. As a result, the Ge:SiN device achieves a 34% larger…
-
Journal Article
Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level. However, GaN HEMTs have nonlinear gate-to-drain junction capacitance…
-
Journal Article
Memcapacitor-Based Insect Feeding Behaviour Classification With Reservoir Computing
In this work, a reservoir computing (RC) system implemented with an organic memcapacitor is presented, tailored for energy-efficient time-series classification. The neuromorphic properties of the memory device are shown, and by exploiting them we demonstrate its suitability as a physical reservoir…
-
Journal Article
Power Spectral Density of Thermal Noise at High Frequencies in Thermal Conductance for Semiconductor Devices
We previously derived the power spectral density (PSD) of thermal flux fluctuations at low frequencies for a thermal conductor under non-equilibrium conditions, which is relevant for device modeling due to self-heating effects. In this work, we extend the analysis to include frequency dependence. A…
-
Journal Article
Continuum Modeling of High-Field Transport in Semiconductors
Continuum approaches are renowned in mathematical physics for their parsimony, robustness, and numerical efficiency, and for these reasons are especially valuable for physics-based modeling. For this paper the relevant field is semiconductor device engineering where the original continuum…
-
Journal Article
Realization of Pure Boron/Si Diodes Through a Two-Step Low-Temperature Growth in a Home-Built LP CVD System
For applications such as photodetection and electron microscopy, adopting ultra-shallow pn-junction diodes with ultra-low saturation currents is crucial. One way to realize such diodes is by employing an ultra-thin boron layer $\text {(}{\sim }2-10$ nm) on top of n-type silicon (Si), i.e., the…
-
Journal Article
Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process
Ferroelectric field-effect transistors (FeFETs) are strong candidates for synaptic devices in neuromorphic and in-memory computing due to their multi-level programmability, non-volatility, and complementary metal-oxide-semiconductor (CMOS) compatibility. In this work, we experimentally demonstrate…
-
Journal Article
Sb-Doped Substrates for Low-Noise Silicon Photomultipliers
Suppressing dark noise in silicon photomultipliers (SiPMs) remains highly challenging because Geiger-mode operation inherently leads to high dark count rates (DCR). Although epitaxial silicon layers grown on heavily doped substrates are widely employed, high-temperature epitaxial processing often…
-
Journal Article
Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
Conventional complementary metal oxide semiconductor (CMOS) devices rely heavily on doping, which increasingly limits scalability due to process constraints and performance degradations at advanced technology nodes. To overcome the drawbacks associated with doping, reconfigurable field-effect…
-
Journal Article
Effect of Terbium Doping on ITZO Thin-Film Transistors for Improved Bias-Stress Stability
InSnZnO (ITZO) thin-film transistors with terbium (Tb)-doped active layers were fabricated to improve the bias-stress stability while maintaining high field-effect mobility. The Tb doping was achieved by Tb4O7 sputtering, with a sputtering power ranging from 0 W to 15 W. Its influence on oxygen…
-
Journal Article
Device Design of Material-Defined Ge Quantum Dots/Si-Based Barriers for Charge Stability and Sensing
We reported a comprehensive design framework, spanning from fundamental electronic structures to device-level carrier transport, for implementing semiconductor qubits based on material-defined germanium (Ge) spherical quantum dots (QDs) with Si-based (Si, Si3N4, SiO2) barriers. Transport properties…
Showing at most 50 pages. Narrow your search with filters for more specific results.