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Advanced Electronic Materials
Scopus
ISSN 2199-160X · Wiley-VCH · 1.744 artikel di indeks
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Artikel Jurnal
Enhanced Dielectric Constant by Al Gradient Doping on Atomic‐Layer‐Deposited HfO2‐Based Metal–Insulator–Metal Capacitor
ABSTRACT As industries increasingly demand larger data capacities and faster processing, enhancing the capacitance of metal–insulator–metal (MIM) capacitors becomes crucial. This study investigates the effect of aluminum (Al) gradient doping on the dielectric constant of HfO2‐based MIM capacitors…
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Artikel Jurnal
MIM‐Diode‐Like Rectification in Lateral 1T/1H/1T‐MoS2 Homojunctions via Interfacial Dipole Engineering
ABSTRACT Lateral 2D tunnel diodes that reproduce metal‐insulator‐metal (MIM)‐diode‐like rectification without using dissimilar contacts are attractive for scalable nanoelectronics. MoS2 can exist in both the semiconducting 1H phase and the metallic 1T phase, enabling phase‐engineered homojunctions…
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Artikel Jurnal
Amorphous Ga2O3 and Temperature‐Tolerant Solar‐Blind Ultraviolet Photodetectors for Extreme Environments
ABSTRACT Environment‐adaptabilities are always critical for optical and electrical components while Ga2O3 thin films have been attractive in UV photodetectors, flexible optoelectronics and multifunctional integrations. Here, we present the atomic‐layer deposited amorphous Ga2O3 thin films and the…
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Artikel Jurnal
Approaching the Monolayer Limit of Carbon Layers by Pyrolysis of Polymer Films
ABSTRACT Research on monolayer materials remains at the forefront of materials research. Here, we present a systematic study of graphenic carbon layers focusing on their structural evolution and electrical properties as film thickness approaches the atomic limit. The ultrathin carbon films are…
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Artikel Jurnal
Ferroelectric–Electrolyte Hybrid Gate Dielectrics for Organic Synaptic Transistors with Long‐Term Plasticity
ABSTRACT Organic electrochemical transistors (OECTs) have been of tremendous interest for neuromorphic memories thanks to their excellent device uniformity, facile processibility and biocompatibility. One of the hurdles for precise emulation of synaptic functions is poor long‐term plasticity…
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Artikel Jurnal
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
ABSTRACT AlN has the largest bandgap in the wurtzite III‐nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field‐effect transistors, analogous to silicon‐on‐insulator technology. Unlike SiO2/Si/SiO2, AlN/GaN/AlN can be grown…
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Artikel Jurnal
Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing
ABSTRACT The emerging nitride ferroelectrics, such as Al1‐xScxN promise to significantly advance our current information technology. In particular, two‐terminal memristive devices are ideal candidates for artificial intelligence accelerators and in‐memory computing due to their simplicity in…
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Artikel Jurnal
Physics‐Informed Deep Learning Method for Real‐Time Multi‐Harmonic Beamforming Based on Space‐Time‐Coding Metasurface
ABSTRACT Space‐time‐coding metasurfaces (STCMs) enable simultaneous controls of electromagnetic wave across multiple harmonics, but designing high‐performance coding sequences in real time remains challenging. Here, we propose an unsupervised physics‐informed deep learning framework that can…
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Artikel Jurnal
AI‐Assisted Bioelectronics for Personalized Health Management
ABSTRACT Personalized health management aims to promote, maintain, and restore the health of individuals. Despite the ever‐lasting research efforts involved in personalized healthcare bioelectronics, current healthcare platforms still face barriers such as costly facilities, specialized operations…
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Artikel Jurnal
Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs
ABSTRACT This study examines gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor field effect transistors on c‐plane sapphire, with emphasis on extending the gate to fully cover the etched recess. All epitaxial layers were grown simultaneously, and devices…
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Artikel Jurnal
ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics
ABSTRACT Achieving ultrahigh mobility in oxide semiconductors without sacrificing stability has remained a long‐standing challenge owing to their inherent disorder and the tradeoff between mobility and stability. In this study, we demonstrated for the first time that the completeness of atomic…
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Artikel Jurnal
Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering
ABSTRACT Gallium oxide (Ga2O3) is an ultra‐wide bandgap semiconductor with several polymorphs, among which the orthorhombic κ‐phase is particularly attractive for high‐power electronics, non‐volatile memory, and charge‐tunable devices due to its large spontaneous polarization and potential…
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Artikel Jurnal
Addendum to: Magnetic Field Screening of 2D Materials Revealed by Magnetic Force Microscopy
ABSTRACT In our original publication, “Magnetic field screening of 2D materials revealed by magnetic force microscopy,” we demonstrated that few‐layer graphene (FLG) exhibits a measurable magnetic field screening effect of approximately 0.5% per graphene layer, as revealed by magnetic force…
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Artikel Jurnal
Modeling and Measurement of Noise in Aluminium Nitride Piezoelectric MEMS
ABSTRACT This study presents a comprehensive investigation into the noise behavior of piezoelectric MEMS devices using a combined experimental and modeling‐based approach. A detailed analysis is performed to decompose the total noise into its constituent sources, including thermal noise in the…
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Artikel Jurnal
Is There A Pure Electronic Ferroelectric?
Abstract Different from traditional ferroelectrics whose polarization stems from ionic displacements mediated by phonons, electronic ferroelectrics exhibit spontaneous polarization originating from polar electronic ordering. Such electronic mechanisms promise devices with ultrafast switching…
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Artikel Jurnal
Extreme Transverse Magnetoresistance in TiZn16
ABSTRACT Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 104–107% when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe2, PtSn4, Cd3As2, and LaSb. The origin of XMR is still hotly debated, possibly…
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Artikel Jurnal
Flexible Thermoelectrics for Wearable Electronics: Trends and Benchmarks in Solid‐State and Ionic Materials, Textile Architectures, Interface Engineering, and Device Performance
Abstract Thermoelectric generators (TEGs) convert waste heat into electricity via the Seebeck effect, offering a compelling route for self‐powered systems. While traditional TEGs have relied on rigid inorganic semiconductors, recent advances have pivoted toward organic, hybrid, 2D, and ionic…
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Artikel Jurnal
Pressure Effects on Monolayer FeCl2: Above‐Room‐Temperature Ferromagnetism with In‐Plane Electric Polarization and Interface‐Free Magnetic Tunnel Junctions
ABSTRACT We investigate the influence of hydrostatic pressure on the physical properties of monolayer FeCl2 for spintronics applications. A phase transition from a ferromagnetic half‐metal to a ferromagnetic semiconductor is unveiled at 4.6 GPa, accompanied by a transition from a non‐polar (1T) to…
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Artikel Jurnal
Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices
Abstract Anti‐ferroelectrics (AFEs) offer unique properties such as double hysteresis window, high endurance, and low latency, making them appealing for neuromorphic computing architectures. This study introduces a novel, compact, and energy‐efficient neuromorphic circuit for spike‐timing‐dependent…
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Artikel Jurnal
Highly Efficient and Flexible Thin Film Thermoelectric Materials from Blends of PEDOT:PSS and AgSb0.94Cd0.06Te2
Abstract Mechanically stable and flexible composite TE thin films based on PEDOT:PSS and AgSb0.94Cd0.06Te2 blend by hot pressing on porous PVDF substrate are fabricated. A considerable enhancement of S and σ is observed in the regime of 60–97.5 wt.% of AgSb0.94Cd0.06Te2. High Seebeck coefficients…
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