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Journal of Microelectronic Manufacturing
ISSN 2578-3769 · JommPublish · 62 articles in the index
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Journal Article
Recent Advances in Organic-inorganic Hybrid Photoresists
Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices. To date, most photoresists have been based on organic polymers, which have been dominating the semiconductor industries over the past few decades. It is obvious that extreme ultraviolet (EUV)…
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Journal Article
Recent Progress of the Integrated Circuit Industry in China ― Overview of the Special Equipment
China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momentum of the Chinese IC industry also attracted wide interest and attention of international…
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Journal Article
Fast and Robust DCNN Based Lithography SEM Image Contour Extraction Models
Scanning electron microscope (SEM) metrology is critical in semiconductor manufacturing for patterning process quality assessment and monitoring. Besides feature width and feature-feature space dimension measurements from critical dimension SEM (CDSEM) images, visual inspection of SEM image also…
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Journal Article
New Progress of China's Integrated Circuit Design Industry
China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momentum of the Chinese IC industry also attracted wide interest and attention of international…
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Journal Article
Patterning with Organized Molecules
Decades of progress in the semiconductor industry has led to lithographically printed dimensions that are small enough that the positions of individual molecules and the stochastic variation in the number of photons have a significant effect on the quality of photoresist patterns. These effects…
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Journal Article
Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist
An i-Line chemically amplified (ICA) thick film positive resist is reported in this paper. The impact of process conditions on photoresist performance was investigated. Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions, thus playing an…
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Journal Article
A Device Design for 5 nm Logic FinFET Technology
With the continuous scaling in conventional CMOS technologies, the planar MOSFET device is limited by the severe short-channel-effect (SCE), Multi-gate FETs (MuG-FET) such as FinFETs and Nanowire, Nanosheet devices have emerged as the most promising candidates to extend the CMOS scaling beyond…
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Journal Article
Study on Simulation and Profile Prediction of Atomic Layer Deposition
The Atomic Layer Deposition process (ALD) is widely used in FinFET, 3D-NAND and other important technologies because of its self-limiting signature and low growth temperature. In recent years, the development of computer enables chances for ALD process simulation in order to improve the process R&D…
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Journal Article
Key Process Approach Recommendation for 5 nm Logic Process Flow with EUV Photolithography
5 nm logic process is the current leading-edge technology which is under development in world-wide leading foundries. In a typical 5 nm logic process, the Fin pitch is 22~27 nm, the contact-poly pitch (CPP) is 48~55 nm, and the minimum metal pitch (MPP) is around 30~36 nm. Due to the fact that…
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Journal Article
A Study of 2D Assist Feature Placement
Sub-resolution assist features have been widely recognized in lithography patterning. In general, the insertion of assist features in optically adjacent space around main designed features, will change the aerial image intensity profiles of corresponding main features. Optimizing assist feature…
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Journal Article
Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing
3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio. Obviously top-down images is not enough for…
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Journal Article
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group of the University of Glasgow. NESS is designed with the main aim to provide an open, flexible, and…
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Journal Article
Fast and Accurate Machine Learning Inverse Lithography Using Physics Based Feature Maps and Specially Designed DCNN
Inverse lithography technology (ILT) is intended to achieve optimal mask design to print a lithography target for a given lithography process. Full chip implementation of rigorous inverse lithography remains a challenging task because of enormous computational resource requirements and long…
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Journal Article
BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology
We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate (CMG) device. This is an industry standard model which has been used extensively for FinFETs IC design and simulation, and has now been extended to accurately model gate-all-around FET (GAAFET). We present the core…
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Journal Article
On the History of the Numerical Methods Solving the Drift Diffusion Model
In 1964 Hermann Gummel published the first numerical solution method for the one-dimensional Drift Diffusion model. In his seminal paper [1] already the nonlinear iteration method and the basics of the discretization method named after him are outlined. Soon after this paper appeared many research…
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Journal Article
Pattern-Centric Computational System for Logic and Memory Manufacturing and Process Technology Development
Chip designers employ computer-aided design, circuit simulation, and design rule check systems. Lithography engineers employ model-based OPC (Optical Proximity Correction) and model-based print-simulation systems. Reticle inspection teams employ Aerial Image Measurement Systems® and Virtual…
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Journal Article
First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function method. Two dimensional (2D) monolayer MoTe2 and SnS2 are combined to a vertical van der Waals…
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Journal Article
Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies
This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scaling, we introduce a multi-stage simulation flow to study the device-to-circuit performance of advanced…
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Journal Article
Machine Learning based Optical Proximity Correction Techniques
The shrinking of the size of the advanced technological nodes brings up new challenges to the semiconductor manufacturing community. The optical proximity correction (OPC) is invented to reduce the errors of the lithographic process. The conventional OPC techniques rely on the empirical models and…
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Journal Article
DFM: “Design for Manufacturing” or “Design Friendly Manufacturing”
As the IC manufacturing enter sub 20nm tech nodes, DFM become more and more important to make sure more stable yield and lower cost. However, by introducing newly designed hardware (1980i etc.) process chemical (NTD) and Control Algorithm (Focus APC) into the mature tech nodes such as 14nm/12nm…