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APL Electronic Devices
ISSN 2995-8423 · AIP Publishing LLC · 194 artikel di indeks
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Hexagonal nanodimers as plasmonic metasurface for SERS exhibiting ultrahigh electromagnetic enhancement
In the era of highly sensitive single-molecule detection, Surface-Enhanced Raman Spectroscopy (SERS) has proven to be one of the most promising surface-sensitive techniques, enabled due to the highly localized plasmonic field at the nanoscaled rough metallic surfaces. Here, we report a theoretical…
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Contact engineering of layered GeAs film for thin channel field-effect devices
A p-type semiconductor for layered materials is yet to be established despite MoS2 being the leading candidate for n-type semiconductors. GeAs (layered IV–V compound) is a stable and pure p-type material with the resistivity of 1–3 × 10−2 Ω cm. GeAs contains no unusual constituent elements for…
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Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSDs) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky barrier diodes (SBDs) and p-NiO/Ga2O3 heterojunction…
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kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE)
This study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model is applied to extract the effective acceptor…
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Recent advances in contact resistivity at metal–semiconductor interfaces for post-Moore nanoscale devices
Post-Moore nanoscale devices are driving the next wave of semiconductor advancement through three-dimensional architectures and material innovation. However, the shrinking source/drain contact area has made metal–semiconductor contact resistivity (ρc) a critical performance bottleneck. Conventional…
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Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3
In this work, we demonstrate device fabrication and characterization of ultrawide bandgap (UWBG) β-(AlxGa1−x)2O3 channel metal–semiconductor field-effect transistors (MESFETs) with Si-implanted source/drain contacts. Films of Si-doped β-(AlxGa1−x)2O3 and unintentionally doped (UID) β-Ga2O3 were…
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Aerosol jet co-printing for flexible and conductive protein–metal electrodes
We report a rapid, single-step aerosol jet co-printing method for flexible, conductive collagen–silver electrodes. By simultaneously depositing collagen and silver nanoparticle inks, we achieve tunable conductivity and biocompatibility using short (
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Temperature dependent high frequency performance of a 62% AlGaN channel HEMT
This article reports on the temperature dependent performance of a HEMT with an Al0.62Ga0.38N channel layer and an Al0.84Ga0.16N barrier layer grown by metal–organic chemical vapor deposition. The device in this report was measured at room temperature and elevated temperatures of 100–150 °C. The…
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E-mode digitally recessed p-NiO tri-junction HEMT with VBR of 2.5 kV
In this work, an AlGaN/GaN high electron mobility transistor (HEMT) with a large positive threshold voltage (VTH) is demonstrated, based on a digitally recessed barrier combined with a p-type NiO/SiO2 gate dielectric stack to form a recessed tri-junction HEMT (TJHEMT). Digital etching precisely…
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Development of opto-electronic synapses based on graphene-like (sp2C)/diamond (sp3C) heterojunctions as “all carbon” ReRAM devices for neuromorphic computing
Electronic devices emulating biological functions, “artificial synapses and neurons,” are essential to advance brain-inspired neuromorphic computing. The integration of allotropic sp2-/sp3-bonded carbon platforms has evoked the realization of neuromorphic devices, that is, memristors. We report the…
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Genetic algorithm optimization of quantum Bragg mirror detectors
Optical absorption in quantum Bragg mirror detectors (QBMDs) relies on transitions between bound states inside a quantum well and bound or quasi-bound states in the continuum in a carefully tailored superlattice. The optimization of QBMDs lattice-matched to InP requires tuning seven specific…
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First demonstration of an N-polar high Al-content AlGaN channel HEMT grown by plasma-assisted molecular beam epitaxy
An N-polar Al0.65Ga0.35N/Al0.85Ga0.15N high electron mobility transistor (HEMT) was demonstrated on an AlN substrate. The epitaxial layers were grown by plasma-assisted molecular beam epitaxy (PAMBE), and a 3 nm in situ GaN cap was employed to prevent surface oxidation of the AlGaN channel. To…
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Dielectric integration and interface defect engineering in β-Ga2O3 metal–oxide–semiconductor (MOS) devices
High-quality dielectrics are crucial for metal–oxide–semiconductor (MOS) device performance, demanding low leakage current, high breakdown strength, and superior interfaces. This necessitates minimal defect density and sufficient energy barriers at both interfaces of the dielectric to prevent…
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DL-alanine-based piezoelectric nanogenerator for electric field assisted wound healing
Biocompatible material-based piezoelectric nanogenerators (PENGs) have become attractive platforms for self-powered biomedical devices. Herein, we explored the effect of DL-alanine crystal growth on its piezoelectric responses. Both the open-circuit voltage (VOC) and short-circuit current (ISC) of…
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Gate-tunable near-field localization switching in black phosphorus via hybrid plasmonic excitation
Integrated photonics increasingly demands ultracompact, low-power, and highly tunable platforms for actively reconfigurable field control. Although black phosphorus (BP) provides strong electrostatic tunability and anisotropic plasmonic dispersion, practical BP plasmonic devices are often limited…
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Controlling spin-mixing conductance in KTaO3 2DEGs by varying argon-ion irradiation time
The Rashba-split two-dimensional electron gas (2DEG) at the surface and interface of insulating oxides such as KTaO3 (KTO) shows great promise for all-oxide spintronics. However, efficient spin current injection into the adjacent 2DEG remains a key challenge. In this study, we report the…
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An electric characterization method for identifying the number and position of unintended defect dots formed in silicon quantum dot devices
We propose a simple and generic electrical characterization method to identify the number and position of quantum dots (QDs) and to distinguish between the designed and unintentionally formed defects in silicon QD devices. This method uses single-electron current mapping in relation to plunger and…
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Fluorinated-PDMS enhanced single-electrode triboelectric nanogenerator for biomechanical energy harvesting and sensing applications
Single-electrode triboelectric nanogenerators (STENGs) are promising candidates for biomechanical energy harvesting and self-powered sensing due to their simple structure and compatibility with wearable systems. However, their performance is often limited by the intrinsic tribonegativity of polymer…
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Investigating bias temperature instability and threshold voltage shifts in indium tin oxide (ITO) transistors
Ultrathin amorphous oxide semiconductors are emerging materials being considered for transistors in memory and various back-end-of-line applications, but their stability remains a concern. Here, we report on both positive and negative bias temperature stability of top-gated indium tin oxide (ITO)…
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Temperature-dependent electrical characterizations of high-current-density AlN quasi-vertical Schottky barrier diodes on AlN substrates
High-current-density (>1 kA/cm2) quasi-vertical AlN Schottky barrier diodes (SBDs) were fabricated on native AlN substrates by metal–organic chemical vapor deposition. The quasi-vertical AlN SBDs exhibited a turn-on voltage of ∼2.5 V, a rectification ratio exceeding 107, an on-state current density…