11 results for "Kun-Lin Lin"
Showing 1–11 · 1.09 seconds · RSS
-
Journal Article Full text
Interfacial Reactions between Si and SiO2 with Ceramic Additives
In this study, 10 wt.% ceramics—Al2O3, La2O3, Y2O3, MgO, and TiO2—were employed as additives for amorphous SiO2 after pressing and annealing at 1300 °C. The amorphous SiO2 changed to cristobalite SiO2. Through X-ray diffraction, scanning electron microscopy, and transmission electron microscopy…
-
Journal Article Full text
Investigation of the interactions between titanium and calcium zirconium oxide (CaZrO3) ceramics modified with alumina
Powdered mixtures of CaO, ZrO2 and Al2O3 in various ratios were hot pressed. The mixtures reacted with titanium at 1600 °C for 30 min in argon to evaluate the suitable ceramic crucibles for casting of titanium. The interfacial microstructures between titanium and ceramic composites were…
-
Journal Article Full text
Reactions between Si melt and various ceramics
Reactions between different kinds of ceramics and silicon were studied to evaluate ceramics as candidates for their use in the process of silicon-crystal growth. Three types of ceramic plates, Al2O3, ZrO2 and quartz (SiO2), were put into contact with a silicon wafer via annealing at 1450 °C for 30…
-
Journal Article
Direct bonding of aluminum to alumina using a nickel interlayer for power electronics applications
Three films of Ni with thicknesses of 100, 300, and 500 nm were deposited on an Al2O3 base and direct bonded with Al to form high-power electronic substrates for comparison. The microstructures of Al/Al2O3 joints were evaluated using a scanning electron microscope (SEM) and transmission electron…
-
Journal Article
Investigation of Gallium Nitride Based HEMTs with Thermal Dissipation
Abstract The heat dissipation optimization process is a crucial element in high power high electron mobility transistor (HEMT) components fabricated using the Gallium Nitride grown on silicon (Si) substrate. In this study, the Si substrate is thinned from 1000 to 600 µm, and then the partial device…
-
Journal Article Full text
Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant
Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN…
-
Journal Article
Growth mechanism and ferroelectric properties of ε-Ga2O3 heteroepitaxially grown on sapphire substrates
This study systematically investigates the influence of growth temperature on the structural, morphological, optical, electrical, and ferroelectric-like properties of ε-Ga2O3 thin films heteroepitaxially grown on c-plane sapphire substrates via metalorganic chemical vapor deposition. Films were…
-
Journal Article
Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity
Abstract Green energy collection is crucial for achieving future net‐zero carbon emissions, with energy harvesting being a key solution. Silicon, a widely used p‐type semiconductor doped with boron ions, is prevalent in modern electronics. However, the impact of lattice boundaries from ion…
-
Journal Article
Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition
Abstract In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a…
-
Journal Article
Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate
Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct growth of high-quality ZAGO epilayers however…
-
Journal Article
High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
Abstract Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (Ion)/subthreshold swing (S.S.) of 181…